型号:

EPC2012

RoHS:无铅 / 符合
制造商:EPC描述:TRANS GAN 200V 3A BUMPED DIE
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
EPC2012 PDF
应用说明 Second Generation eGaN® FETs
Assembling eGaN® FETS
Using eGaN® FETs
产品培训模块 Paralleling eGaN? FETs
标准包装 1,000
系列 eGaN®
FET 型 GaNFET N 通道,氮化镓
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 3A
开态Rds(最大)@ Id, Vgs @ 25° C 100 毫欧 @ 3A,5V
Id 时的 Vgs(th)(最大) 2.5V @ 1mA
闸电荷(Qg) @ Vgs 1.5nC @ 100V
输入电容 (Ciss) @ Vds 128pF @ 100V
功率 - 最大 -
安装类型 表面贴装
封装/外壳 模具
供应商设备封装 模具
包装 带卷 (TR)
配用 917-1013-ND - BOARD DEV FOR EPC2012 200V EGAN
其它名称 917-1017-2
相关参数
E2E-X5E1 5M Omron Electronics Inc-IA Div SENS PROX M18 5MM DC3W-NO 5M
E2E-X2Y2-US Omron Electronics Inc-IA Div SENS PROX M12 2MM AC2W-NC
AML51-K20RR Honeywell Sensing and Control LENS FOR INCAND DIPLAY AML41J
EPC1013 EPC TRANS GAN150V 3A BUMPED DIE
E2E-X2Y2 Omron Electronics Inc-IA Div SENS PROX M12 2MM AC2W-NC
ZVN0545A Diodes Inc MOSFET N-CH 450V 90MA TO92-3
BZ-2RL5551T Honeywell Sensing and Control SWITCH LEAF LVR SPDT 15A SCREW
ZVP0545A Diodes Inc MOSFET P-CH 450V 45MA TO92-3
CC2511F32RSPR Texas Instruments IC SOC W/RF TXRX 8051 MCU 36-QFN
E2E-X2Y1 Omron Electronics Inc-IA Div SENS PROX M12 2MM AC2W-NO
AML51-K20YG Honeywell Sensing and Control LENS FOR INCAND DIPLAY AML41J
CC1110F32RSPR Texas Instruments IC SOC RF TXRX W/8051 MCU 36-QLP
E2E-X2MY2 Omron Electronics Inc-IA Div SENS PROX M8 2MM AC2W-NC
ZVN4306A Diodes Inc MOSFET N-CH 60V 1.1A TO92-3
BZ-2R55156T-S Honeywell Sensing and Control SWITCH PLUNGER SPDT 10A SCREW
E2E-X2MY1 Omron Electronics Inc-IA Div SENS PROX M8 2MM AC2W-NO
CC1110F32RSPR Texas Instruments IC SOC RF TXRX W/8051 MCU 36-QLP
ZVN4310A Diodes Inc MOSFET N-CH 100V 900MA TO92-3
E2E-X2MF2-M3 Omron Electronics Inc-IA Div SENS PROX M8 2MM DC3W-NC
AML53-T60RR Honeywell Sensing and Control RECT 2 PC COVER FOR PADDLE SWES